The undesired transport of electrons from the gate electrode into the channel is accounted for through the modeling of thermionic emission and quantum tunneling. The model describes the movement of charge carriers within the HEMT structure using an isothermal transport model, where carrier velocities are limited by phonon scattering and high-field velocity saturation. The model has been used to investigate the prospects of improving the radio frequency performance of the device by means of device scaling, specifically through the scaling of the gate length and the distance between the gate electrode and the channel. A Technology CAD (TCAD) model of a pseudomorphic indium phosphide high electron mobility transistor (HEMT) optimized for cryogenic operation has been developed.
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